Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 39-42 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.39 |
| Citation | J. Chen et al., 2008, Materials Science Forum, 600-603, 39 |
| Online since | September, 2008 |
| Authors | J. Chen, S.C. Lien, Y.C. Shin, Zhe Chuan Feng, C.H. Kuan, J.H. Zhao, J.H. Zhao, Wei Jie Lu |
| Keywords | 4H-SiC, 6H-SiC, Raman Scattering, TEM |
| Abstract | The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied. The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features. Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal. |
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