Paper Title:
The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
  Abstract

The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H, 6H and 15R SiC. In 4H and 6H SiC the UD-4 defect consists of two families of no-phonon (NP) lines, Ua and Ub, and in 15R SiC it consists of three families, Ua, Ub and U15R. The Ua family in 4H, 6H and 15R all show similar temperature behavior with higher energy NP lines becomming observable at higher temperatures. In the case of the Ub and U15R families, a luminescence line with lower energy than the prominent luminescence line appears at higher temperatures. The polarization and Zeeman measurements suggest that the defect has C3v symmetry.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
397-400
DOI
10.4028/www.scientific.net/MSF.600-603.397
Citation
A. Gällström, B. Magnusson, A. Thuaire, P. PASKOV, A. Henry, E. Janzén, "The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC", Materials Science Forum, Vols. 600-603, pp. 397-400, 2009
Online since
September 2008
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Price
$32.00
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