Paper Title:
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Abstract

The novel technique microwave detected photo induced current transient spectroscopy (MD-PICTS) was applied to semi-insulating 6H-SiC in order to investigate the properties of inherent defect levels. Defect spectra can be obtained in the similar way to conventional PICTS and DLTS. However, there is no need for contacting the samples, which allows for non-destructive and spatially resolved electrical characterization. This work is focused on the investigation of semi-insulating 6H-SiC grown under different C/Si-ratios. In the corresponding MD-PICTS spectra several shallow defect levels appear in the low temperature range. However the peak assignment needs further investigation. Additionally different trap reemission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
405-408
DOI
10.4028/www.scientific.net/MSF.600-603.405
Citation
S. Hahn, F. C. Beyer, A. Gällström, P. Carlsson, A. Henry, B. Magnusson, J.R. Niklas, E. Janzén, "Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material ", Materials Science Forum, Vols. 600-603, pp. 405-408, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Luciano Scaltrito, Edvige Celasco, Samuele Porro, Sergio Ferrero, Fabrizio Giorgis, C. Fabrizio Pirri, Denis Perrone, Umberto M. Meotto, P. Mandracci, G. Richieri, Luigi Merlin, Anna Cavallini, Antonio Castaldini, Marco Rossi
1081
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
Abstract:From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200...
379
Authors: A. Andrianakis, Charalamos A. Londos, Andrzej Misiuk, Valentin V. Emtsev, Gagik A. Oganesyan, H. Ohyama
Abstract:We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subjected to thermal treatments at 1000oC and 1130oC...
123
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Andreas J. Schriefl, Sokratis Sgouridis, Werner Schustereder, Werner Puff
Chapter 8: Defect and Impurity Characterization
Abstract:The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not...
319