Paper Title:
Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
  Abstract

We report photo-induced electron paramagnetic resonance (photo-EPR) data for irradiated n-type 4H-SiC. Energy levels and associated photo-induced transitions are discussed for silicon vacancy (VSi), carbon vacancy (VC), carbon antisite-vacancy pair (CSiVC), and divacancy (VSiVC).

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
409-412
DOI
10.4028/www.scientific.net/MSF.600-603.409
Citation
T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, "Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 409-412, 2009
Online since
September 2008
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