Paper Title:
The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
  Abstract

An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point of the compensation of different type of dopant was drawn. And the relationship between the doping properties of vanadium and orientation of SiC domains was investigated.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
43-46
DOI
10.4028/www.scientific.net/MSF.600-603.43
Citation
J. M. Hao, L. J. Wang, B. Fen, X. Q. Wang, Y. Hong, D. L. Meng, J. M. Guo, R. Y. Yan, "The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk ", Materials Science Forum, Vols. 600-603, pp. 43-46, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Peter J. Wellmann, Thomas L. Straubinger, Patrick Desperrier, Ralf Müller, Ulrike Künecke, Sakwe Aloysius Sakwe, Holger Schmitt, Albrecht Winnacker, Elisabeth Blanquet, Jean Marc Dedulle, Michel Pons
Abstract:We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which...
25
Authors: Kap Ryeol Ku, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, Byoung Chul Shin
Abstract:SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with...
83
Authors: Sylvie Contreras, Marcin Zielinski, Leszek Konczewicz, Caroline Blanc, Sandrine Juillaguet, Ralf Müller, Ulrike Künecke, Peter J. Wellmann, Jean Camassel
Abstract:We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements...
633
Authors: Ekaterina N. Kalabukhova, D.V. Savchenko, Siegmund Greulich-Weber, M.F. Bulanyi, S.A. Omelchenko, O.V. Khmelenko, A.A. Gorban, E.N. Mokhov
Abstract:In this paper, we report on a photoluminescence (PL) and EPR study of several semiinsulating (SI) 4H SiC samples showing the different...
651
Authors: Philip Hens, Ulrike Künecke, Peter J. Wellmann
Abstract:We present p-type doping of bulk SiC crystals by the modified physical vapor transport (M-PVT) technique using TMA (Tri-Methyl-Aluminum)....
19