The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 43-46 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.43 |
| Citation | Jian Min Hao et al., 2008, Materials Science Forum, 600-603, 43 |
| Online since | September, 2008 |
| Authors | Jian Min Hao, Li Jie Wang, Bin Fen, Xiang Quan Wang, Ying Hong, Da Lei Meng, Jun Min Guo, Ru Yue Yan |
| Keywords | Electricity , PVT Growth, Silicon Carbide (SiC), Vanadium Doping |
| Abstract | An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point of the compensation of different type of dopant was drawn. And the relationship between the doping properties of vanadium and orientation of SiC domains was investigated. |
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