Paper Title:
The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
  Abstract

Local vibrational mode energies of optical centres, obtained by low-temperature photoluminescence experiments, are compared with the results of published local density approximation calculations to arrive at atomic models for the carbon interstitial-related defects responsible for the light emission.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
433-436
DOI
10.4028/www.scientific.net/MSF.600-603.433
Citation
J. W. Steeds, "The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC", Materials Science Forum, Vols. 600-603, pp. 433-436, 2009
Online since
September 2008
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