Paper Title:
Ionization Energies of Phosphorus Donors in 6H-SiC
  Abstract

6H-SiC was doped with phosphorus (P) donors by neutron transmutation. IR transmission spectra were taken in the temperature range from 6 K to 300 K. A great number of absorption lines is observed at temperatures below 140 K; these lines are attributed to transitions of the donor electron between ground states and bound excited states of P-related donors. Based on Faulkner's theory, three series of effective-mass-like states (P1, P2, P3) could be identified. The corresponding ground state energies are: E(P1) = EC - 91.5 meV, E(P2) = EC - 81.8 meV, E(P3) = EC - 73.5 meV.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
441-444
DOI
10.4028/www.scientific.net/MSF.600-603.441
Citation
F. Schmid, K. Semmelroth, M. Krieger, H. B. Weber, G. Pensl, E. E. Haller, "Ionization Energies of Phosphorus Donors in 6H-SiC", Materials Science Forum, Vols. 600-603, pp. 441-444, 2009
Online since
September 2008
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