Paper Title:
A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
  Abstract

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
453-456
DOI
10.4028/www.scientific.net/MSF.600-603.453
Citation
M. K. Linnarsson, J. Isberg, A. Schöner, A. Hallén, "A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond", Materials Science Forum, Vols. 600-603, pp. 453-456, 2009
Online since
September 2008
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Price
$32.00
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