Paper Title:
Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
  Abstract

The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
457-460
DOI
10.4028/www.scientific.net/MSF.600-603.457
Citation
I.G. Atabaev, C. C. Tin, B.G. Atabaev, T.M. Saliev, E.N. Bakhranov, N.A. Matchanov, S.L. Lutpullaev, J. Zhang, N.G. Saidkhanova, F.R. Yuzikaeva, I. Nuritdinov, A. K. Islomov, M.Z. Amanov, R. , A. Kumta, "Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC", Materials Science Forum, Vols. 600-603, pp. 457-460, 2009
Online since
September 2008
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