Paper Title:
Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
  Abstract

A simulation study for high temperature chemical vapor deposition (HTCVD) of silicon carbide (SiC) is presented. Thermodynamic properties of the species were derived from the first-principles calculations in order to evaluate the activation energy (Ea) in the gas phase reaction. Pathways producing SiC2 and Si2C from SiCl4-C3H8-H2 system were proposed to investigate the effect of chlorinated species on HTCVD. A thermo-fluid analysis was carried out to estimate the partial pressures of the species. It was found that the main sublimed species of Si, SiC2, Si2C decreased in the SiCl4-C3H8-H2 system compared to the SiH4-C3H8-H2 system. This suggests that the growth rate would decrease in the atmosphere of chlorinated species at around 2500°C.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
47-50
DOI
10.4028/www.scientific.net/MSF.600-603.47
Citation
Y. Kito, E. Makino, K. Inaba, N. Hosokawa, H. Hiramatsu, J. Hasegawa, S. Onda, H. Tsuboi, H. Takaba, A. Miyamoto, "Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis", Materials Science Forum, Vols. 600-603, pp. 47-50, 2009
Online since
September 2008
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Price
$32.00
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