Paper Title:
Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
  Abstract

To elucidate the origin of giant step bunching on 4˚ off-axis 4H-SiC (0001) faces, we carried out hydrogen etching and epitaxial growth under various conditions. We found that giant step bunching occurs during hydrogen etching and epitaxial growth at extremely low or high C/Si ratios, i.e., with an excessive supply of SiH4 or C3H8. From these results, we have proposed that the origins of giant step bunching are asymmetry in the step kinetics in etching and Si or C cluster generation on terraces during growth.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
473-476
DOI
10.4028/www.scientific.net/MSF.600-603.473
Citation
Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida, "Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces", Materials Science Forum, Vols. 600-603, pp. 473-476, Sep. 2008
Online since
September 2008
Price
US$ 28,-
Share
Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
Abstract:4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have...
219
Authors: Kazutoshi Kojima, Hajime Okumura, Kazuo Arai
Abstract:We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of...
113
Authors: Kazutoshi Kojima, Satchiko Ito, Akiyo Nagata, Hajime Okumura
Chapter 2: SiC Epitaxial Growth
Abstract: