Paper Title:
Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
  Abstract

X-ray diffraction (XRD) rocking curves were mapped across 4H-SiC, 3-inch, 8° off-cut substrates prior to and after epitaxial growth, where a pattern of slightly higher defectivity region was clearly seen. This same pattern was apparent in both cross-polarization images of the epiwafers and microwave photoconductivity decay (μ-PCD) lifetime maps of the epilayers, where the latter shows the lifetime in the high defectivity regions had drastically decreased. Within the short lifetime regions, electron trap concentrations were similar to that as in the long lifetime regions as determined by deep level transient spectroscopy; however, the extended defect density was significantly higher. Consequently, high spatial resolution XRD can be a valuable tool in preselecting substrates for epitaxial growth to produce low defect density material with long injected carrier lifetimes.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
481-484
DOI
10.4028/www.scientific.net/MSF.600-603.481
Citation
R. L. Myers-Ward, K. K. Lew, B. L. VanMil, R. E. Stahlbush, K. X. Liu, J. D. Caldwell, P. B. Klein, P. Wu, M. Fatemi, C. R. Eddy, D. K. Gaskill, "Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes", Materials Science Forum, Vols. 600-603, pp. 481-484, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara
Abstract:In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing...
97
Authors: Robert E. Stahlbush, Kendrick X. Liu, Q. Zhang, Joseph J. Sumakeris
Abstract:A non-destructive technique to image the dislocations and other extended defects in SiC epitaxial layers has been developed. Basal plane...
295
Authors: Rachael L. Myers-Ward, Brenda L. VanMil, Robert E. Stahlbush, S.L. Katz, J.M. McCrate, S.A. Kitt, Charles R. Eddy, D. Kurt Gaskill
Abstract:Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in...
105
Authors: Birgit Kallinger, Bernd Thomas, Sebastian Polster, Patrick Berwian, Jochen Friedrich
Abstract:Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the...
299
Authors: Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna
Abstract:A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers,...
95