Paper Title:
Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers
  Abstract

The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n- 4H-SiC epilayers are investigated. For three optical measurement techniques, it is shown that the high and low injection lifetimes can vary dramatically. Differences in the lifetime for varying injection level and temperature are approached both experimentally and via carrier dynamics simulations, assuming Z1/Z2 as the dominant defect. Reasonable agreement between measured and calculated behavior is obtained, as is insight into the recombination kinetics associated with the lifetime limiting defect.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
489-492
DOI
10.4028/www.scientific.net/MSF.600-603.489
Citation
P. B. Klein, J. D. Caldwell, A. Shrivastava, T. S. Sudarshan, "Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers", Materials Science Forum, Vols. 600-603, pp. 489-492, 2009
Online since
September 2008
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