Paper Title:
Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
  Abstract

We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering spectroscopy. Electrical properties such as free carrier density were examined for the SiC crystals through Raman measurements of the A1 LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The peak frequency and band width of LOPC mode varied with carrier density in the range from 1016 to 1019 cm-3. The line shape analysis revealed that the carrier density in the SiC crystals can be simply estimated from measured frequency shift of LOPC mode for 4H- and 6H-SiC crystals.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
501-504
DOI
10.4028/www.scientific.net/MSF.600-603.501
Citation
T. Kitamura, S. Nakashima, T. Kato, K. Kojima, H. Okumura, "Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy", Materials Science Forum, Vols. 600-603, pp. 501-504, 2009
Online since
September 2008
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$32.00
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