Paper Title:
Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
  Abstract

We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the temperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibrium carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with coefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide temperature range and attributed to recharging of defect states.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
509-512
DOI
10.4028/www.scientific.net/MSF.600-603.509
Citation
K. Neimontas, K. Jarašiūnas, R. Yakimova, M. Syväjärvi, G. Ferro, "Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means ", Materials Science Forum, Vols. 600-603, pp. 509-512, 2009
Online since
September 2008
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