Paper Title:
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
  Abstract

This work focuses on computational analysis of SiC High Temperature Chemical Vapor Deposition (HTCVD) from silicon tetrachloride (SiCl4) and propane (C3H8) precursors supplied separately and diluted by argon and hydrogen, respectively. It is aimed at verification of the technological parameters providing complete precursor decomposition in the growth chamber, the optimal gas composition for SiC growth, and the required silicon-to-carbon ratio in the wafer region, as well as suppression of parasitic deposits at the reactor walls and inlet unit via the optimization of the reactor geometry and temperature distributions. As a result, a high growth rate and maximal yield are expected to be achieved due to minimal precursor losses.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
51-53
DOI
10.4028/www.scientific.net/MSF.600-603.51
Citation
Y. N. Makarov, R.A. Talalaev, A.N. Vorob'ev, M. S. Ramm, M. V. Bogdanov, "Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane ", Materials Science Forum, Vols. 600-603, pp. 51-53, 2009
Online since
September 2008
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Price
$32.00
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