Paper Title:
Thermal Expansion Coefficients of 6H Silicon Carbide
  Abstract

The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice parameter measurements at temperatures from 300 K to 1575 K. All samples have a volume of at least 6 x 6 x 6 mm3 to ensure that bulk properties are measured. The measurements were performed with a triple axis diffractometer with high energy x-rays with a photon energy of 60 keV. The values for the thermal expansion coefficients along the a- and c-direction, α11 and α33, are in the range of 3·10-6 K-1 for 300 K and 6·10-6 K-1 for 1550 K. At high temperatures the coefficients for aluminum doped samples are approximately 0.5·10-6 K-1 lower than for the nitrogen doped crystal. α11 and α33 appear to be isotropic.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
517-520
DOI
10.4028/www.scientific.net/MSF.600-603.517
Citation
M. Stockmeier, S. A. Sakwe, P. Hens, P. J. Wellmann, R. Hock, A. Magerl, "Thermal Expansion Coefficients of 6H Silicon Carbide", Materials Science Forum, Vols. 600-603, pp. 517-520, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani
Abstract:The coefficient of thermal expansion (CTE) of SiC single crystals is important, in particular, for both designing device assembly and...
699
Authors: Shi Ming Zhang, Bing Teng, De Gao Zhong, Bing Tao Zhang, Shu Jie Zhuang, Hui Xu, Jian Hong Li, Romano A. Rupp
Chapter 2: Material Science Engineering and Technologies
Abstract:A new mixed laser crystal, Yb0.006Y0.923Lu0.071VO4, has been successfully grown using the Czochralski method. X-ray powder diffraction...
192