Paper Title:
Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
  Abstract

Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by the PPE method. The thermal diffusivities of the [1-100] and [11-20] orientations (^c-axis) samples were higher than those of the [0001] orientation (//c-axis) samples. Moreover, the thermal anisotropies of the lattice component and the carrier component were analyzed by Raman measurement.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
521-524
DOI
10.4028/www.scientific.net/MSF.600-603.521
Citation
P. Wutimakun, H. Miyazaki, Y. Okamoto, J. Morimoto, T. Hayashi, H. Shiomi, "Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method ", Materials Science Forum, Vols. 600-603, pp. 521-524, 2009
Online since
September 2008
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