Paper Title:
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
  Abstract

Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities [1]. This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
525-528
DOI
10.4028/www.scientific.net/MSF.600-603.525
Citation
L. Ottaviani, M. Kazan, P. M. Masri , T. Sauvage, "Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites", Materials Science Forum, Vols. 600-603, pp. 525-528, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Prema Rani, R. Saravanan
Abstract:Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown...
153
Authors: Xiao Lei Li, Li Ying Wang, Er An Zai, Hong An Ma, Xiao Peng Jia
Abstract:Heat treatment is an effective means of structural adjustment and performance improvement of AlN ceramics. AlN ceramics prepared at high...
68
Authors: Kwan Ho Park, Il Ho Kim
Abstract:Co4-xFexSb12-ySny skutterudites were synthesized by mechanical alloying and hot pressing, and...
65
Authors: H. Setiadi, A. Prasetyo, V. Suendo, Agustinus Agung Nugroho
Chapter 7: Applied Research Techniques of Phenomena in Solid State Materials
Abstract:Phonon properties of cobalt doped rutile TiO2 single crystal was investigated using a Raman Spectrometer with laser wavelength at...
360