Paper Title:
SiC Polytype Stability Influenced by Ge Impurities
  Abstract

In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This methodology is based on the investigation of growth related parameters. These parameters involve substrate temperature, effect of impurities on surface diffusion, strain, and super-saturation conditions as solved by using SSMBE growth (Solid Source molecular beam epitaxy).

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
533-536
DOI
10.4028/www.scientific.net/MSF.600-603.533
Citation
R. Nader, M. Kazan, E. Moussaed, C. Zgheib, B. Nsouli, J. Pezoldt, P. M. Masri , "SiC Polytype Stability Influenced by Ge Impurities", Materials Science Forum, Vols. 600-603, pp. 533-536, 2009
Online since
September 2008
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