Paper Title:
Space Charge Waves in 6H-SiC and 4H-SiC
  Abstract

Resonant excitation of space charge waves (SCW) by means of an oscillating light pattern has been investigated in hexagonal silicon carbide with 4H and 6H stacking sequence. The experimental data can be explained by the existence of trap recharging waves in the 4H-SiC sample and damped forced charge-density waves in the 6H-SiC sample.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
537-540
DOI
10.4028/www.scientific.net/MSF.600-603.537
Citation
A. A. Lebedev, M. Lemmer, B. Hilling, M. Wohlecke, M. Imlau, V.V. Bryksin, M. Petrov, "Space Charge Waves in 6H-SiC and 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 537-540, 2009
Online since
September 2008
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