Paper Title:
Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
  Abstract

Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and grazing-incidence Synchrotron White Beam X-ray Topography. Images of low angle grain boundaries on the PL images correlate well with SWBXT observations, and similar correlation can be established for some micropipe images although the latter is complicated by the overall level of distortion and misorientation associated with the low angle grain boundaries and the fact that many of the micropipes are located in or close to the boundaries. This validation indicates that PL imaging may provide a rapid way of imaging such defect structures in large-scale SiC wafers.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
549-552
DOI
10.4028/www.scientific.net/MSF.600-603.549
Citation
Y. Chen, R. Balaji, M. Dudley, M. Murthy, S. I. Maximenko, J. A. Freitas, "Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography", Materials Science Forum, Vols. 600-603, pp. 549-552, 2009
Online since
September 2008
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