Paper Title:
Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
  Abstract

We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 oC, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC. Many hexagonal-shaped crystals of approximately 100 m in diameter were observed via a scanning electron microscope (SEM). A high resolution transmission electron microscope (HR-TEM) lattice image of the grown crystals showed a periodical structure with A-B stacking along the <0001> direction. These results indicated that the Li-based flux was useful for growing bulk 2H-SiC single crystals.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
55-58
DOI
10.4028/www.scientific.net/MSF.600-603.55
Citation
M. Imade, T. Ogura, M. Uemura, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, T. Sasaki, M. Yamazaki, S. Suwabe, "Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System", Materials Science Forum, Vols. 600-603, pp. 55-58, 2009
Online since
September 2008
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$32.00
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