Paper Title:
Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
  Abstract

There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection system by KLA-Tencor meets these requirements. Using this system, incoming inspection of purchased SiC wafers has been performed. The obtained inspection data show that micropipe density is sufficiently low in a device-grade wafer, and therefore, micropipes are not the main cause of device failure. The next challenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defects classified as “particles”.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
553-556
DOI
10.4028/www.scientific.net/MSF.600-603.553
Citation
T. Hatakeyama, K. Ichinoseki, N. Higuchi, K. Fukuda, K. Arai, "Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System", Materials Science Forum, Vols. 600-603, pp. 553-556, 2009
Online since
September 2008
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$32.00
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