Paper Title:
Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
  Abstract

Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material, detailed analysis of the deformed charge transients allows the evaluation of the partial resistivity contributions.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
557-560
DOI
10.4028/www.scientific.net/MSF.600-603.557
Citation
S. Mueller, R. Stibal, W. Jantz, "Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te ", Materials Science Forum, Vols. 600-603, pp. 557-560, 2009
Online since
September 2008
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