Paper Title:
Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
  Abstract

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
567-570
DOI
10.4028/www.scientific.net/MSF.600-603.567
Citation
J. Röhrl, M. Hundhausen, K. V. Emtsev, T. Seyller, L. Ley, "Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy ", Materials Science Forum, Vols. 600-603, pp. 567-570, 2009
Online since
September 2008
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