Paper Title:
Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
  Abstract

The reliability of thermal oxides grown on n-type 4H-SiC C(000-1) face wafer has been investigated. In order to examine the influence of different oxidation atmospheres and temperatures on the reliability, metal-oxide-semiconductor capacitors were manufactured and the different oxides were characterized by C-V measurements and constant-current-stress. The N2O-oxides show the smallest flat band voltage shift compared to the ideal C-V curve and so the lowest number of effective oxide charges. They reveal also the lowest density of interface states in comparison to the other oxides grown on the C(000-1) face, but it is still higher than the best oxides on the Si(000-1) face. Higher oxidation temperatures result in smaller flat band voltage shifts and lower interface state densities. Time to breakdown measurements show that the charge-to-breakdown value of 63% cumulative failure for the N2O-oxide on the C(000-1) face is more than one order of magnitude higher than the highest values measured on the Si(000-1) face. Therefore it can be concluded that a smaller density of interface states results in a higher reliability of the oxide.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
597-602
DOI
10.4028/www.scientific.net/MSF.600-603.597
Citation
M. Grieb, D. Peters, A. J. Bauer, P. Friedrichs, H. Ryssel, "Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face", Materials Science Forum, Vols. 600-603, pp. 597-602, 2009
Online since
September 2008
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