Paper Title:
Structure and Lattice Location of Ge Implanted 4H-SiC
  Abstract

Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and rapid thermal annealing at implanted Ge concentrations below 10%. At higher implantation doses followed by annealing 3C-SiC inclusion and SiGe precipitates are formed. Transmission electron microscopy investigations accompanied with “atomic location by channeling enhanced microanalysis” of the annealed samples revealed an increasing incorporation of Ge on Si lattice sites.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
623-626
DOI
10.4028/www.scientific.net/MSF.600-603.623
Citation
T. Kups, K. Tonisch, M. Voelskow, W. Skorupa, A. Konkin, J. Pezoldt, "Structure and Lattice Location of Ge Implanted 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 623-626, 2009
Online since
September 2008
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