Paper Title:
Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
  Abstract

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
635-638
DOI
10.4028/www.scientific.net/MSF.600-603.635
Citation
R. Ghandi, H. S. Lee, M. Domeij, C. M. Zetterling, M. Östling, "Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide", Materials Science Forum, Vols. 600-603, pp. 635-638, 2009
Online since
September 2008
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$32.00
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