Paper Title:
Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC
  Abstract

N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolar diodes and TLM structures. The p-type emitter of diodes was realized by Al implantations followed by a post-implantation annealing with or without a graphite capping layer. Ohmic contacts were formed by depositing Ti/Ni on the backside and Ni/Al on the topside of the wafer. It appears that capping the sample during the annealing reduces considerably the surface roughness and the specific contact resistance. Sheet resistance and specific contact resistance as low as 2kΩ/□ and respectively 1.75×10-4 Ωcm² at 300 K have been obtained. I-V measurements as a function of temperature have been performed from ~100 to ~500 K. The variations of the series resistance vs. temperature can be explained by the freeze-out of carriers and by the variation of carrier mobility.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
639-642
DOI
10.4028/www.scientific.net/MSF.600-603.639
Citation
D. M. Nguyen, C. Raynaud, M. Lazar, H. Vang, D. Planson, "Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC ", Materials Science Forum, Vols. 600-603, pp. 639-642, 2009
Online since
September 2008
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$32.00
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