Paper Title:
Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode
  Abstract

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
643-646
DOI
10.4028/www.scientific.net/MSF.600-603.643
Citation
A. Kinoshita, T. Nishi, T. Ohyanagi, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai, "Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode", Materials Science Forum, Vols. 600-603, pp. 643-646, 2009
Online since
September 2008
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