Paper Title:
Isotropic Etching of SiC
  Abstract

Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF6 at elevated substrate temperatures. It was observed to be remarkable at substrate temperatures above 350°C. The influence of chamber pressure, masking materials, rf-power and substrate temperature were analyzed. Thereby, 8.5° off-axis oriented 4HSiC wafers exhibit a larger vertical and lateral etching rate compared to on-axis oriented SiC wafers. Additionally, the erosion of nitrogen containing masking material results in a reduction of the etching rates.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
651-654
DOI
10.4028/www.scientific.net/MSF.600-603.651
Citation
T. Stauden, F. Niebelschütz, K. Tonisch, V. Cimalla, G. Ecke, C. Haupt, J. Pezoldt, "Isotropic Etching of SiC", Materials Science Forum, Vols. 600-603, pp. 651-654, 2009
Online since
September 2008
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$32.00
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