Paper Title:
4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 655-658 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.655 |
| Citation | Hitoshi Habuka et al., 2008, Materials Science Forum, 600-603, 655 |
| Online since | September, 2008 |
| Authors | Hitoshi Habuka, Yusuke Katsumi, Yutaka Miura, Keiko Tanaka, Yasushi Fukai, Takaya Fukae, Yuan Gao, Tomohisa Kato, Hajime Okumura, Kazuo Arai |
| Keywords | 4H-SiC, Chlorine Trifluoride, Dry Etching, Surface Morphology |
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Abstract
The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increases with the increasing ClF3 gas flow rate. The etch rate of the Si-face is smaller than that of the C-face. The etched surface of the Si-face shows many hexagonal-shaped etch pits. The C-face after the etching is very smooth with a very small number of round shaped shallow pits. The average roughness of the etched surface tends to be small at the higher temperatures.
