Paper Title:
Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
  Abstract

Anisotropic thermal etching of 4H-SiC {0001} and {11-20} substrates was studied in the mixed gas of chlorine (Cl2) and oxygen (O2) over 900oC. Etch pits appeared only on the (0001) Si face. Etching rates depended on the temperature, O2/Cl2 ratio, and an etching direction on the substrate surfaces. When the mesa structure was formed by the selective etching method, sloped sidewalls were observed around the periphery of the mesa. The angle of sidewalls depended on the orientation of substrates.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
659-662
DOI
10.4028/www.scientific.net/MSF.600-603.659
Citation
T. Hatayama, T. Shimizu, H. Yano, Y. Uraoka, T. Fuyuki, "Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen ", Materials Science Forum, Vols. 600-603, pp. 659-662, 2009
Online since
September 2008
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Price
$32.00
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