Paper Title:
Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
  Abstract

To explain the growth rate enhancement of SiC oxidation in the thin oxide regime, which was recently found from the real time monitoring experiments of the initial oxidation stage of SiC (000–1) C-face using an in-situ spectroscopic ellipsometer, we tried to apply the interfacial Si emission model, which has been originally proposed for Si oxidation, and found that the Si emission model successfully reproduced the SiC oxidation rates at the whole range of oxide thickness and at oxidation temperatures measured. By comparing with the simulations for Si oxidation, we have discussed the oxidation mechanism of SiC.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
663-666
DOI
10.4028/www.scientific.net/MSF.600-603.663
Citation
Y. Hijikata, T. Yamamoto, H. Yaguchi, S. Yoshida, "Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime", Materials Science Forum, Vols. 600-603, pp. 663-666, 2009
Online since
September 2008
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$32.00
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