Paper Title:
Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
  Abstract

Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation were performed using an in-situ ellipsometer over the oxygen-partial-pressure range from 0.1 to 1.0 atm. We analyzed the relations between oxide growth rate and oxide thickness by applying an empirical relation proposed by Massoud et al. We found the occurrence of oxidation enhancement in the thin oxide regime also for Si-face as well as for C-face. We have discussed the oxygen-partial-pressure dependence of the oxidation rate constants between SiC C- and Si face, comparing with that of Si.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
667-670
DOI
10.4028/www.scientific.net/MSF.600-603.667
Citation
T. Yamamoto, Y. Hijikata, H. Yaguchi, S. Yoshida, "Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry ", Materials Science Forum, Vols. 600-603, pp. 667-670, 2009
Online since
September 2008
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