Paper Title:
Structural Characterization of CF-PVT Grown Bulk 3C-SiC
  Abstract

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
67-70
DOI
10.4028/www.scientific.net/MSF.600-603.67
Citation
A. Mantzari, F. Mercier, M. Soueidan, D. Chaussende, G. Ferro, E. K. Polychroniadis, "Structural Characterization of CF-PVT Grown Bulk 3C-SiC ", Materials Science Forum, Vols. 600-603, pp. 67-70, 2009
Online since
September 2008
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