Paper Title:
TEM Observation of SiO2/4H-SiC Hetero Interface
  Abstract

The SiO2/4H-SiC hetero-interface was observed using TEM in plan-view geometry. Local roughening of the SiO2/4H-SiC hetero-interface accompanied with local generation of basal-plane dislocations in SiC was observed. In some places, local variations in film thickness of SiO2 as well as the presence of extra carbon and particle-like contrast asociated with the generation of basal-plane dislocations in SiC was observed. The influence of these defect regions on MOSFET properties is discussed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
671-674
DOI
10.4028/www.scientific.net/MSF.600-603.671
Citation
H. Matsuhata, J. Senzaki, I. Nagai, H. Yamaguchi, "TEM Observation of SiO2/4H-SiC Hetero Interface ", Materials Science Forum, Vols. 600-603, pp. 671-674, 2009
Online since
September 2008
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$32.00
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