Paper Title:
Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
  Abstract

The improvement of the SiC-SiO2 interface has been the main focus of research in SiC MOSFET technology due to the presence of high density of interface traps (Dit) leading to poor threshold voltage temperature stability and poor mobility. In SiC MOSFETs with the gate oxide grown in the presence of sodium, known as sodium enhanced oxidation(SEO), a lower Dit and higher field effect mobility has been observed [1]. Hall effect measurements were performed from 125°K-225°K on such MOSFET samples. The Hall measurements were made as a function of temperature for various sheet charge concentrations. The sheet charge density was measured as a function of gate bias at 225°K and there is very little trapped charge in the sample with oxide grown by SEO while about 50 % of the total charge is trapped in a sample with N2O grown oxide annealed in NO. In samples with oxide grown by SEO, there is a monotonic increase in mobility with sheet charge density and the mobility also increases with temperature. This is an indication that the main scattering mechanism is Coulomb scattering in this regime.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
687-690
DOI
10.4028/www.scientific.net/MSF.600-603.687
Citation
V. Tilak, K. Matocha, G. Dunne, F. Allerstam, E. Ö. Sveinbjörnsson, "Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique ", Materials Science Forum, Vols. 600-603, pp. 687-690, 2009
Online since
September 2008
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$32.00
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