Paper Title:
High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
  Abstract

Improvement of the channel mobility is needed in 4H-SiC MOSFETs for the maximum utilization of the material potential for novel power devices. We have attempted to obtain smoother MOS interfaces as one of the ways to reduce the interface states which lead to decrease of the channel mobility. We formed a terrace on the macro-stepped surface by annealing in Si melt and found that it was atomically flat. We fabricated a lateral MOSFET on the macro-stepped surface and obtained a high MOS channel mobility of 102 cm2/Vs.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
695-698
DOI
10.4028/www.scientific.net/MSF.600-603.695
Citation
T. Masuda, S. Harada, T. Tsuno, Y. Namikawa, T. Kimoto, "High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface", Materials Science Forum, Vols. 600-603, pp. 695-698, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant K. Agarwal, Scott Allen, John W. Palmour
Chapter IV: SiC Devices and Circuits
Abstract:Alkali (Rb, Cs) and alkaline earth elements (Sr, Ba) provide SiO2/SiC interface conditions suitable for obtaining high...
749
Authors: Kensaku Yamamoto, Sauvik Chowdhury, T. Paul Chow
Chapter IV: SiC Devices and Circuits
Abstract:NO annealed Lateral (11-20) MOSFETs were fabricated and mobility limiting mechanisms were investigated by MOS-gated Hall measurements,...
713