100 mm 4HN-SiC Wafers with Zero Micropipe Density |
| Journal |
Materials Science Forum (Volumes 600 - 603) |
| Volume |
Silicon Carbide and Related Materials 2007 |
| Edited by |
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages |
7-10 |
| DOI |
10.4028/www.scientific.net/MSF.600-603.7 |
| Online since |
September, 2008 |
| Authors |
R.T. Leonard,
Y. Khlebnikov,
Adrian R. Powell,
C. Basceri,
M.F. Brady,
I. Khlebnikov,
Jason R. Jenny,
D.P. Malta,
Michael J. Paisley,
Valeri F. Tsvetkov,
R. Zilli,
E. Deyneka,
H.McD. Hobgood,
Vijay Balakrishna,
Calvin H. Carter Jr.
|
| Keywords |
4HN-SiC, Crystal, Defect, Diameter, Dislocation, Micropipe, PVT, Seeded Sublimation, Silicon Carbide (SiC), Substrate, Wafer |
| Abstract |
Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes. Crystal growth studies for 3-inch material with similar processes have demonstrated a 1c screw dislocation median density of 175 cm-2, compared to typical densities of 2x103 to 4x103 cm-2 in current production wafers. These values were obtained through optical scanning analyzer methods and verified by x-ray topography. |
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