Paper Title:
100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Abstract

Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes. Crystal growth studies for 3-inch material with similar processes have demonstrated a 1c screw dislocation median density of 175 cm-2, compared to typical densities of 2x103 to 4x103 cm-2 in current production wafers. These values were obtained through optical scanning analyzer methods and verified by x-ray topography.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
7-10
DOI
10.4028/www.scientific.net/MSF.600-603.7
Citation
R.T. Leonard, Y. Khlebnikov, A. R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, J. R. Jenny, D.P. Malta, M. J. Paisley, V. F. Tsvetkov, R. Zilli, E. Deyneka, H.M.D. Hobgood, V. Balakrishna, C. H. Carter Jr., "100 mm 4HN-SiC Wafers with Zero Micropipe Density", Materials Science Forum, Vols. 600-603, pp. 7-10, 2009
Online since
September 2008
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Price
$35.00
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