Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 703-706 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.703 |
| Citation | Shigeomi Hishiki et al., 2008, Materials Science Forum, 600-603, 703 |
| Online since | September, 2008 |
| Authors | Shigeomi Hishiki, Sergey A. Reshanov, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl |
| Keywords | Channel Mobility, Hall Effect, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), γ-Ray |
| Price | US$ 28,- |
N-channel MOSFETs are irradiated with gamma-rays (g-rays) up to 3.16 MGy(SiO2) at room temperature. Above 1 MGy, the effective channel mobility increases with increasing absorbed dose. A similar increase is observed for the Hall mobility in the inversion layer. In addition, the Hall-effect measurements indicate a reduction of the interface trap density.