Paper Title:

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Periodical Materials Science Forum (Volumes 600 - 603)
Main Theme Silicon Carbide and Related Materials 2007
Edited by Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages 703-706
DOI 10.4028/www.scientific.net/MSF.600-603.703
Citation Shigeomi Hishiki et al., 2008, Materials Science Forum, 600-603, 703
Online since September, 2008
Authors Shigeomi Hishiki, Sergey A. Reshanov, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl
Keywords Channel Mobility, Hall Effect, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), γ-Ray
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Abstract

N-channel MOSFETs are irradiated with gamma-rays (g-rays) up to 3.16 MGy(SiO2) at room temperature. Above 1 MGy, the effective channel mobility increases with increasing absorbed dose. A similar increase is observed for the Hall mobility in the inversion layer. In addition, the Hall-effect measurements indicate a reduction of the interface trap density.