Paper Title:
Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
  Abstract

The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post implantation annealing for source and drain was carried out with carbon coating on the sample surface are compared to MOSFETs that post implantation annealing was carried out without carbon coating. The radiation resistance (gamma-rays) of the carbon-coated MOSFETs is higher than that of non-coated ones. The channel mobility for MOSFETs whose gate oxide was formed using pyrogenic or dry oxidation process dose not change by gamma-ray irradiation below 1x105 Gy. The value of channel mobility slightly increases with increasing dose above 1x105 Gy. No significant increase in irradiation induced interface traps is observed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
707-710
DOI
10.4028/www.scientific.net/MSF.600-603.707
Citation
S. Hishiki, N. Iwamoto, T. Ohshima, H. Itoh, K. Kojima, K. Kawano, "Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays", Materials Science Forum, Vols. 600-603, pp. 707-710, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Vitalii V. Kozlovski, Alexander A. Lebedev, Elena V. Bogdanova, Natalia. V. Seredova
Chapter II: Fundamental and Characterization of SiC
Abstract:Effects of electron irradiation in n-4H-SiC have been studied by the methods of the capacitance--voltage characteristics and...
293
Authors: Stanislav Popelka, Pavel Hazdra
4.2 MOSFETs
Abstract:The effect of 4.5 MeV electron irradiation on static characteristics of commercially available 5 A/1700 V SiC power MOSFETs is investigated....
856