Paper Title:
Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
  Abstract

We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100°C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
71-74
DOI
10.4028/www.scientific.net/MSF.600-603.71
Citation
D. Chaussende, F. Mercier, R. Madar, M. Pons, "Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy", Materials Science Forum, Vols. 600-603, pp. 71-74, 2009
Online since
September 2008
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$32.00
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