Paper Title:
4H-SiC p-Channel MOSFETs with Epi-Channel Structure
  Abstract

From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to control the electrical properties of 4H-SiC p-channel MOSFETs through locating the p-type epitaxial layer at the channel area, so called “epi-channel MOSFET” structure. We varied the dopant concentrations and the thickness of the epi-channel layer, and investigated their electrical properties. In case of heavily doped epi-channel samples, the devices indicated “normally-on” characteristics, and their channel mobility decreased slightly in comparison with the inversion-type devices. As for lightly doped epi-channel samples, the subthreshold current increased with thickness of the epi-channel layer keeping their “normally-off” characteristics. Their channel mobility also increased with thickness of the epi-channel layer. The peak value of field effect channel mobility of the sample with 2.5 μm thickness and 5×1015 /cm3 dopant concentration epi-channel was 18.1 cm2/Vs.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
711-714
DOI
10.4028/www.scientific.net/MSF.600-603.711
Citation
M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai, "4H-SiC p-Channel MOSFETs with Epi-Channel Structure", Materials Science Forum, Vols. 600-603, pp. 711-714, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Y. Kanzaki, H. Kinbara, Hajime Kosugi, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
1429
Authors: Eiichi Okuno, Takeshi Endo, Hideo Matsuki, Toshio Sakakibara, Hiroaki Tanaka
Abstract:In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel...
817
Authors: Masato Noborio, Y. Kanzaki, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
Abstract:Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type...
821
Authors: Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda
Abstract:It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the...
783
Authors: Kenya Yamashita, Kyoko Egashira, Koichi Hashimoto, Kunimasa Takahashi, Osamu Kusumoto, Kazuya Utsunomiya, Masashi Hayashi, Masao Uchida, Chiaki Kudo, Makoto Kitabatake, Shin Hashimoto
Abstract:In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage...
1115