4H-SiC p-Channel MOSFETs with Epi-Channel Structure
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 711-714 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.711 |
| Citation | Mitsuo Okamoto et al., 2008, Materials Science Forum, 600-603, 711 |
| Online since | September, 2008 |
| Authors | Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai |
| Keywords | Channel Mobility, CMOS, Epi-Channel Structure, P-Channel MOSFET |
| Price | US$ 28,- |
From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to control the electrical properties of 4H-SiC p-channel MOSFETs through locating the p-type epitaxial layer at the channel area, so called “epi-channel MOSFET” structure. We varied the dopant concentrations and the thickness of the epi-channel layer, and investigated their electrical properties. In case of heavily doped epi-channel samples, the devices indicated “normally-on” characteristics, and their channel mobility decreased slightly in comparison with the inversion-type devices. As for lightly doped epi-channel samples, the subthreshold current increased with thickness of the epi-channel layer keeping their “normally-off” characteristics. Their channel mobility also increased with thickness of the epi-channel layer. The peak value of field effect channel mobility of the sample with 2.5 μm thickness and 5×1015 /cm3 dopant concentration epi-channel was 18.1 cm2/Vs.
