Paper Title:
Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
  Abstract

We have identified the crystal planes of 4H-SiC, interfacing with gate oxide, which will lead to minimum defect density and lowest interface corrugations. The atomic surface density, surface energy, and surface roughness of various crystal planes of 4H-SiC have been computationally characterized using Molecular Dynamics simulations. We have also investigated the screening distances of defects in SiO2 and SiC using a multiscale approach.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
715-718
DOI
10.4028/www.scientific.net/MSF.600-603.715
Citation
A. Chatterjee, A. Bhat, K. Matocha, "Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 600-603, pp. 715-718, 2009
Online since
September 2008
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