Paper Title:
Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
  Abstract

We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line shapes observed are nearly the same for vendor 1 devices subjected to a nitric oxide (NO) anneal and devices without it, the relationship between EDMR and gate voltage differs greatly between these samples. Furthermore, the EDMR response versus gate bias varies dramatically. EDMR results from a third device produced by a second vendor are very different from those provided by the first vendor. This result implies that significantly different defect populations are present in devices fabricated by different vendors.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
719-722
DOI
10.4028/www.scientific.net/MSF.600-603.719
Citation
C. J. Cochrane, P. M. Lenahan, A. J. Lelis, "Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs", Materials Science Forum, Vols. 600-603, pp. 719-722, 2009
Online since
September 2008
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