Paper Title:
The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study
  Abstract

Recently, Wang et. al. formulated a criterion for identifying the source of deep interface sates at the SiC/SiO2 interface, based on the known inefficiency of H2 passivation. We apply this criterion to a variety of excess carbon defects at the interface, which we have predicted to be energetically feasible. We find that, also with respect to this criterion, the simple C split interstitials are the most likely cause of the deep interface states among the examined defects.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
723-726
DOI
10.4028/www.scientific.net/MSF.600-603.723
Citation
J. M. Knaup, P. Deák, T. Frauenheim, "The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study ", Materials Science Forum, Vols. 600-603, pp. 723-726, 2009
Online since
September 2008
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