Paper Title:
Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
  Abstract

We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post oxidation annealing (POA) in nitric oxide (NO) gas. A significant reduction in interface-trap density (Dit) has been observed in 1300 oC-grown dry oxide with or without NO POA if compared with the Dit of 1400 oC-grown dry oxide. The reason for this has been explained in this paper.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
731-734
DOI
10.4028/www.scientific.net/MSF.600-603.731
Citation
J. H. Moon, K. Y. Cheong, H. K. Song, J. H. Yim, M. S. Oh, J. H. Lee, W. Bahng, N. K. Kim, H. J. Kim, "Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface", Materials Science Forum, Vols. 600-603, pp. 731-734, 2009
Online since
September 2008
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