Paper Title:
Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
  Abstract

This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
747-750
DOI
10.4028/www.scientific.net/MSF.600-603.747
Citation
D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, "Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs", Materials Science Forum, Vols. 600-603, pp. 747-750, 2009
Online since
September 2008
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Price
$32.00
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